| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 120 | |
| 100 | |
| 6.5 | |
| 150 | |
| 0.4 | |
| 1.2@100mA@1A | |
| 0.15@100mA@1A | |
| 2 | |
| 1000 | |
| 300@100mA@5V | |
| 1300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5 mm |
| Package Width | 2.5 mm |
| Package Length | 4.5 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-89 |
| 4 | |
| Lead Shape | Flat |
Add switching and amplifying capabilities to your electronic circuit with this NPN 2SC6096-TD-E GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6.5 V. Its maximum power dissipation is 1300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6.5 V.
| EDA / CAD Models |
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