| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 150 | |
| 90 | |
| 7 | |
| 3.3@5A@20A | |
| 2.5@5A@20A | |
| 20 | |
| 20@12A@5V | |
| 140000 | |
| -65 | |
| 200 | |
| Tray | |
| Mounting | Through Hole |
| Package Height | 8.51(Max) mm |
| Package Width | 26.67(Max) mm |
| Package Length | 39.37 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-3 |
| 3 | |
| Lead Shape | Through Hole |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN 2N5038G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 140000 mW. The component will be shipped in tray format. It has a maximum collector emitter voltage of 90 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| EDA / CAD Models |
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