| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 75 | |
| 50 | |
| 6 | |
| 1.2@15mA@150mA|2@50mA@500mA | |
| 0.3@15mA@150mA|1@50mA@500mA | |
| 0.8 | |
| 50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V | |
| 500 | |
| -65 | |
| 200 | |
| Waffle | |
| Mounting | Surface Mount |
| Package Height | 1.91(Max) mm |
| Package Width | 3.94(Max) mm |
| Package Length | 5.72(Max) mm |
| PCB changed | 4 |
| Supplier Package | CSMD |
| 4 | |
| Lead Shape | No Lead |
This specially engineered NPN 2N2222AUA GP BJT from Optek Technology (TT electronics) comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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