Diodes IncorporatedZXTN19020DZTAGP BJT
Trans GP BJT NPN 20V 7.5A 4460mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 70 | |
| 20 | |
| 7 | |
| 1.1@375mA@7.5A | |
| 0.032@100mA@1A|0.07@10mA@1A|0.1@20mA@2A|0.08@40mA@2A|0.105@400mA@4A|0.2@375mA@7.5A | |
| 7.5 | |
| 300@100mA@2V|260@2A@2V|150@7.5A@2V|50@15A@2V | |
| 4460 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5 |
| Package Width | 2.5 |
| Package Length | 4.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-89 |
| 4 | |
| Lead Shape | Flat |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN ZXTN19020DZTA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 4460 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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