Diodes IncorporatedZXTN04120HFFTADarlington BJT

Thanks to Diodes Zetex's NPN ZXTN04120HFFTA Darlington transistor, you can easily amplify a current and output a much higher current gain value within your circuit. This Darlington transistor array's maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.7@1mA@1A V. This product's maximum continuous DC collector current is 1 A, while its minimum DC current gain is 3000@50mA@5 V|3000@500mA@5V|3000@1A@5V|1000@2A@5V. It has a maximum collector emitter saturation voltage of 0.9@0.25mA@250mA|1.5@1mA@1A|1.5@5mA@2A V. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C.