| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 50 | |
| 17.5 | |
| 5 | |
| 0.95@20mA@4A | |
| 0.045@10mA@0.5A|0.75@10mA@1A|0.15@10mA@2A|0.245@20mA@4A | |
| 4 | |
| 10 | |
| 280@10mA@2V|300@500mA@2V|300@1A@2V|220@4A@2V|50@20A@2V | |
| 1000 | |
| -55 | |
| 200 | |
| Mounting | Through Hole |
| Package Height | 3.9 |
| Package Width | 2.28 |
| Package Length | 4.57 |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | E-Line |
| 3 | |
| Lead Shape | Through Hole |
Implement this versatile NPN ZTX1048A GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 17.5 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C.
| EDA / CAD Models |
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