| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | NRND |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Material | SiC |
| Configuration | Dual |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain-Source Voltage (V) | 1200 |
| Maximum Gate-Source Voltage (V) | 25 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Continuous Drain Current (A) | 498 |
| Maximum Gate-Source Leakage Current (nA) | 3600 |
| Maximum IDSS (uA) | 2000 |
| Maximum Drain-Source Resistance (mOhm) | 5.67@20V |
| Typical Gate Charge @ Vgs (nC) | 1025@20V |
| Typical Input Capacitance @ Vds (pF) | 19500@800V |
| Maximum Power Dissipation (mW) | 1786000(Typ) |
| Typical Fall Time (ns) | 43 |
| Typical Rise Time (ns) | 68 |
| Typical Turn-Off Delay Time (ns) | 168 |
| Typical Turn-On Delay Time (ns) | 76 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 125 |
| Mounting | Screw |
| Package Length | 106.4 |
| PCB changed | 7 |
| Pin Count | 7 |
