Microchip TechnologyVN2450N3-GMOSFETs
Trans MOSFET N-CH Si 500V 0.2A 3-Pin TO-92 Bag
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±20 | |
| 0.2 | |
| 13000@10V | |
| 150(Max)@25V | |
| 1000 | |
| 20(Max) | |
| 10(Max) | |
| 25(Max) | |
| 10(Max) | |
| -55 | |
| 150 | |
| Bag | |
| Mounting | Through Hole |
| Package Height | 5.33(Max) |
| Package Width | 4.19(Max) |
| Package Length | 5.21(Max) |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-92 |
| 3 |
Compared to traditional transistors, VN2450N3-G power MOSFETs, developed by Microchip Technology, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Design AI-powered medical devices
Explore system design tips, part recs and AI insights to help you build faster, safer diagnostic and therapy solutions—all in Arrow’s latest white paper.