| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 15 | |
| 2 | |
| 1.5 | |
| 2.3 | |
| 90(Typ)@10V | |
| 11.25@10V | |
| 11.25 | |
| 2.6 | |
| 1.5 | |
| 791 | |
| 13 | |
| 5.5 | |
| 19 | |
| 6.5 | |
| -40 | |
| 125 | |
| Tape and Reel | |
| 90@10V|134@4.5V|198@3V|232@2.7V | |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) mm |
| Package Width | 3.98(Max) mm |
| Package Length | 5(Max) mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| 8 | |
| Lead Shape | Gull-wing |
Create an effective common drain amplifier using this TPS1101DR power MOSFET from Texas Instruments. Its maximum power dissipation is 791 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 125 °C.
| EDA / CAD Models |
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