| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Material | Si |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 40 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 100 |
| Maximum Drain-Source Resistance (mOhm) | 2.3@10V |
| Typical Gate Charge @ Vgs (nC) | 19.4@4.5V|41@10V |
| Typical Gate Charge @ 10V (nC) | 41 |
| Typical Input Capacitance @ Vds (pF) | 2750@20V |
| Maximum Power Dissipation (mW) | 2670 |
| Typical Fall Time (ns) | 12.2 |
| Typical Rise Time (ns) | 7.8 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Mounting | Surface Mount |
| Package Height | 0.85 mm |
| Package Width | 3.1 mm |
| Package Length | 3.1 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TSON Advance |
| Pin Count | 8 |
