| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Material | Si |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 200 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Operating Junction Temperature (°C) | 150 |
| Maximum Continuous Drain Current (A) | 36 |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 10 |
| Maximum Drain-Source Resistance (mOhm) | 29@10V |
| Typical Gate Charge @ Vgs (nC) | 22@10V |
| Typical Gate Charge @ 10V (nC) | 22 |
| Typical Gate to Drain Charge (nC) | 4.4 |
| Typical Gate to Source Charge (nC) | 9 |
| Typical Switch Charge (nC) | 8.2 |
| Typical Input Capacitance @ Vds (pF) | 1700@100V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 7@100V |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Output Capacitance (pF) | 180 |
| Maximum Power Dissipation (mW) | 2800 |
| Typical Fall Time (ns) | 12 |
| Typical Rise Time (ns) | 8 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 24@10V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.8 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 102 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 78.1 |
| Typical Gate Plateau Voltage (V) | 60 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Gate Resistance (Ohm) | 6 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Mounting | Surface Mount |
| Package Height | 0.95 mm |
| Package Width | 5 mm |
| Package Length | 5 mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOP Advance |
| Pin Count | 8 |
| Lead Shape | No Lead |
