| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Material | Si |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 800 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 17 |
| Maximum Drain-Source Resistance (mOhm) | 290@10V |
| Typical Gate Charge @ Vgs (nC) | 32@10V |
| Typical Input Capacitance @ Vds (pF) | 2050@300V |
| Maximum Power Dissipation (mW) | 45000 |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 24 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Mounting | Through Hole |
| Package Height | 15 |
| Package Width | 4.5 |
| Package Length | 10 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220SIS |
| Pin Count | 3 |
