STMicroelectronicsTIP35CGP BJT
Trans GP BJT NPN 100V 25A 125000mW 3-Pin(3+Tab) TO-247 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 100 | |
| 100 | |
| 5 | |
| 150 | |
| 5 | |
| 1.8@1.5A@15A|4@5A@25A | |
| 25 | |
| 25@1.5A@4V|10@15A@4V | |
| 125000 | |
| -65 | |
| 150 | |
| Tube | |
| Industrial | |
| Mounting | Through Hole |
| Package Height | 20.15(Max) mm |
| Package Width | 5.15(Max) mm |
| Package Length | 15.75(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 | |
| Lead Shape | Through Hole |
The three terminals of this NPN TIP35C GP BJT from STMicroelectronics give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 125000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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