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onsemiTIP122GDarlington BJT
Trans Darlington NPN 100V 5A 2000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 100 | |
| 4(Min) | |
| 100 | |
| 5 | |
| 5 | |
| 200 | |
| 0.12 | |
| -65 to 150 | |
| 4(Min) | |
| 2@12mA@3A|4@20mA@5A | |
| 1000@0.5A@3V|1000@3A@3V | |
| 2000 | |
| -65 | |
| 150 | |
| Tube | |
| 500 to 3600 | |
| Mounting | Through Hole |
| Package Height | 8.9 mm |
| Package Width | 4.45 mm |
| Package Length | 10.1 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
Do you need a device that can yield much higher current gains? Thanks to ON Semiconductor, the NPN TIP122G Darlington transistor can amplify a current to meet your needs. This product's maximum continuous DC collector current is 5 A, while its minimum DC current gain is 1000@0.5A@3 V|1000@3A@3V. It has a maximum collector emitter saturation voltage of 2@12mA@3A|4@20mA@5A V. This Darlington transistor array's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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