STMicroelectronicsTD352IDTGate and Power Drivers
Driver 5V 1-OUT High Side/Low Side Half Brdg Inv 8-Pin SO N T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8542.39.00.90 | |
| Automotive | No |
| PPAP | No |
| High Side|Low Side | |
| Inverting | |
| Half Bridge | |
| 1 | |
| Dependent | |
| IGBT|MOSFET | |
| 1 | |
| 100 | |
| 100 | |
| 500 | |
| 12 | |
| 26 | |
| 2.5(Typ) | |
| 5 | |
| 500 | |
| -40 | |
| 125 | |
| Automotive | |
| Under Voltage Lockout | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.65(Max) |
| Package Width | 4(Max) |
| Package Length | 5(Max) |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SO N |
| 8 | |
| Lead Shape | Gull-wing |
Switch between states in a high power transistor by using this TD352IDT power driver developed by STMicroelectronics. This device has a maximum propagation delay time of 500 ns and a maximum power dissipation of 500 mW. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device has a minimum operating supply voltage of 12 V and a maximum of 26 V. This gate driver has an operating temperature range of -40 °C to 125 °C.
| EDA / CAD Models |
Design AI-powered medical devices
Explore system design tips, part recs and AI insights to help you build faster, safer diagnostic and therapy solutions—all in Arrow’s latest white paper.