| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| -55 to 175 | |
| 90 | |
| 100 | |
| 1 | |
| 9.3@10V | |
| 160@10V | |
| 160 | |
| 36 | |
| 40 | |
| 90 | |
| 9200@25V | |
| 760@25V | |
| 1 | |
| 975 | |
| 2400 | |
| 300 | |
| 190 | |
| 140 | |
| 20 | |
| -55 | |
| 175 | |
| 200 | |
| 1 | |
| 60 | |
| 1.5 | |
| 20 | |
| Mounting | Through Hole |
| Package Height | 9.01(Max) |
| Package Width | 4.65(Max) |
| Package Length | 10.51(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
This SUP90P06-09L-E3 power MOSFET from Vishay can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2400 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
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