| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±10 | |
| 0.25 | |
| 2200@4.5V | |
| 12@10V | |
| 150 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Width | 0.8 mm |
| Package Length | 1.2 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | VESM |
| 3 |
Make an effective common gate amplifier using this SSM3K37MFV,L3F power MOSFET from Toshiba. Its maximum power dissipation is 150 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Counter UAV Threats With Smart Defenses
Learn how to combine intelligent processing, advanced sensing and rapid response into a unified counter-UAV defensive system.