| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Material | Si |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 20 |
| Maximum Gate-Source Voltage (V) | ±10 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Operating Junction Temperature (°C) | 150 |
| Maximum Continuous Drain Current (A) | 6 |
| Maximum Gate-Source Leakage Current (nA) | 1000 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 22.1@8V |
| Typical Gate Charge @ Vgs (nC) | 38.5@8V |
| Typical Gate to Drain Charge (nC) | 3.6 |
| Typical Gate to Source Charge (nC) | 4.1 |
| Typical Input Capacitance @ Vds (pF) | 1331@10V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 118@10V |
| Minimum Gate Threshold Voltage (V) | 0.3 |
| Typical Output Capacitance (pF) | 135 |
| Maximum Power Dissipation (mW) | 2000 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Maximum Positive Gate-Source Voltage (V) | 10 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Mounting | Surface Mount |
| Package Width | 1.8 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23F |
| Pin Count | 3 |
| Lead Shape | Flat |
