| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Si | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| 4.4 | |
| 1000 | |
| 1 | |
| 25.8@4.5V | |
| 24.8@4.5V | |
| 1800@10V | |
| 800 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Width | 1.7 mm |
| Package Length | 2 mm |
| PCB changed | 3 |
| Supplier Package | UFM |
| 3 |
Make an effective common source amplifier using this SSM3J130TU(TE85L) power MOSFET from Toshiba. Its maximum power dissipation is 800 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This device utilizes u-mos vi technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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