Infineon Technologies AGSPW20N60CFDFKSA1MOSFETs
Trans MOSFET N-CH 650V 20.7A 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| ±20 | |
| 5 | |
| 20.7 | |
| 220@10V | |
| 95@10V | |
| 95 | |
| 2400@25V | |
| 208000 | |
| 6.4 | |
| 15 | |
| 59 | |
| 12 | |
| -55 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 20.95 mm |
| Package Width | 5.3 mm |
| Package Length | 15.9 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 | |
| Lead Shape | Through Hole |
As an alternative to traditional transistors, the SPW20N60CFDFKSA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 208000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Design AI-powered medical devices
Explore system design tips, part recs and AI insights to help you build faster, safer diagnostic and therapy solutions—all in Arrow’s latest white paper.