| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 25 | |
| 9.5@4.5V | |
| 38@4.5V|62.5@8V | |
| 2760@10V | |
| 3600 | |
| 38 | |
| 28 | |
| 92 | |
| 23 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) |
| Package Width | 3.05 |
| Package Length | 3.05 |
| PCB changed | 8 |
| Supplier Package | PowerPAK 1212 EP |
| 8 | |
| Lead Shape | No Lead |
As an alternative to traditional transistors, the SIS407DN-T1-GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 3600 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
Smarter Drone Systems from Concept to Deployment
Download the playbook and get equipped with powerful tools and smart strategies for designing agile, efficient, modular drone systems.