VishaySIA527DJ-T1-GE3MOSFETs
Trans MOSFET N/P-CH Si 12V 4.5A 6-Pin PowerPAK SC-70 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Dual Dual Drain | |
| 0.18um | |
| Enhancement | |
| N|P | |
| 2 | |
| 12 | |
| ±8 | |
| 1 | |
| 4.5 | |
| 100 | |
| 1 | |
| 29@4.5V@N Channel|41@4.5V@P Channel | |
| 9.7@8V|5.6@4.5V@N Channel|17@8V|10.5@4.5V@P Channel | |
| 500@6V@N Channel|1500@6V@P Channel | |
| 1900 | |
| 10@N Channel|15@P Channel | |
| 10@N Channel|22@P Channel | |
| 22@N Channel|32@P Channel | |
| 10@N Channel|22@P Channel | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.75(Max) mm |
| Package Width | 2.05 mm |
| Package Length | 2.05 mm |
| PCB changed | 6 |
| Supplier Package | PowerPAK SC-70 |
| 6 | |
| Lead Shape | No Lead |
Amplify electronic signals and switch between them with the help of Vishay's SIA527DJ-T1-GE3 power MOSFET. Its maximum power dissipation is 1900 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N|P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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