| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 4.1 | |
| 100 | |
| 1 | |
| 42@10V | |
| 16@10V | |
| 16 | |
| 4.5 | |
| 2.3 | |
| 1 | |
| 120 | |
| 2500 | |
| 30 | |
| 14 | |
| 42 | |
| 14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 33@10V|43@6V|56@4.5V | |
| 2.5 | |
| 30 | |
| 95 | |
| 0.8 | |
| 3.2 | |
| 30 | |
| 1.1 | |
| 20 | |
| 4.1 | |
| Mounting | Surface Mount |
| Package Height | 1.38 mm |
| Package Width | 3.9 mm |
| Package Length | 4.9 mm |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
Create an effective common drain amplifier using this SI9435BDY-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 1300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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