| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 150 | |
| ±20 | |
| 2.6 | |
| 105@10V | |
| 17@10V | |
| 17 | |
| 1400 | |
| 50 | |
| 36 | |
| 18 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) |
| Package Width | 5.89 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | PowerPAK SO EP |
| 8 | |
| Lead Shape | No Lead |
If you need to either amplify or switch between signals in your design, then Vishay's SI7956DP-T1-GE3 power MOSFET is for you. Its maximum power dissipation is 1400 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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