| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Source | |
| Enhancement | |
| P | |
| 2 | |
| 12 | |
| ±8 | |
| 2.3 | |
| 80@4.5V | |
| 5.7@4.5V | |
| 1100 | |
| 30 | |
| 35 | |
| 35 | |
| 15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1 |
| Package Width | 4.4 |
| Package Length | 3 |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | TSSOP |
| 8 | |
| Lead Shape | Gull-wing |
Increase the current or voltage in your circuit with this SI6943BDQ-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 800 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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