| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| 0.18um | |
| Enhancement | |
| P | |
| 2 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 8 | |
| 100 | |
| 1 | |
| 29@10V | |
| 15@4.5V|32@10V | |
| 32 | |
| 7.5 | |
| 4 | |
| 22 | |
| 1350@15V | |
| 185@15V | |
| 1 | |
| 215 | |
| 2500 | |
| 12|16 | |
| 8|35 | |
| 45|40 | |
| 10|42 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 24@10V|33@4.5V | |
| 2.5 | |
| 32 | |
| 85 | |
| 0.75 | |
| 3.4 | |
| 34 | |
| 1.2 | |
| 20 | |
| 7.3 | |
| Mounting | Surface Mount |
| Package Height | 1.38 |
| Package Width | 3.9 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
Make an effective common source amplifier using this SI4925DDY-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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