| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 3 | |
| -55 to 175 | |
| 6 | |
| 100 | |
| 1 | |
| 22@10V | |
| 18@10V | |
| 18 | |
| 5.3 | |
| 3.4 | |
| 1 | |
| 110 | |
| 3300 | |
| 12 | |
| 10 | |
| 25 | |
| 10 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 18@10V|25@4.5V | |
| 40 | |
| 0.8 | |
| 50 | |
| 1.2 | |
| 0.5 | |
| 2.4 | |
| 20 | |
| Mounting | Surface Mount |
| Package Height | 1.55(Max) |
| Package Width | 4(Max) |
| Package Length | 5(Max) |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC N |
| 8 | |
| Lead Shape | Gull-wing |
Amplify electronic signals and switch between them with the help of Vishay's SI4850EY-T1-GE3 power MOSFET. Its maximum power dissipation is 1700 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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