| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Material | Si |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 30 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Continuous Drain Current (A) | 7.5 |
| Maximum Gate-Source Leakage Current (nA) | 10000 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain-Source Resistance (mOhm) | 17@10V |
| Typical Gate Charge @ Vgs (nC) | 6.8@5V |
| Typical Input Capacitance @ Vds (pF) | 440@10V |
| Maximum Power Dissipation (mW) | 1500 |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 25 |
| Typical Turn-Off Delay Time (ns) | 35 |
| Typical Turn-On Delay Time (ns) | 7 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Mounting | Surface Mount |
| Package Width | 2.4 mm |
| Package Length | 3 mm |
| PCB changed | 8 |
| Supplier Package | TSMT |
| Pin Count | 8 |
| Lead Shape | Flat |
