STMicroelectronicsPD57030-ERF FETs
Trans RF MOSFET N-CH 65V 4A 3-Pin PowerSO-10RF (Formed lead) Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 65 | |
| ±20 | |
| 10(Min) | |
| 4 | |
| 57@28V | |
| 2.3@28V | |
| 30@28V | |
| 1.8 | |
| 52800 | |
| 30(Min) | |
| 14 | |
| 1000 | |
| 53 | |
| -65 | |
| 165 | |
| Tube | |
| Industrial | |
| Mounting | Surface Mount |
| Package Height | 3.5 |
| Package Width | 9.4 |
| Package Length | 9.5 |
| PCB changed | 3 |
| Standard Package Name | SO |
| Supplier Package | PowerSO-10RF (Formed lead) |
| 3 | |
| Lead Shape | Gull-wing |
Implement a switching capability into your circuit design with this PD57030-E RF amplifier from STMicroelectronics. Its maximum power dissipation is 52800 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C.
| EDA / CAD Models |
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