STMicroelectronicsPD57018-ERF FETs
Trans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Single | |
| MOSFET | |
| Enhancement | |
| N | |
| 1 | |
| LDMOS | |
| 65 | |
| ±20 | |
| 10(Min) | |
| 2.5 | |
| 1000 | |
| 1 | |
| 760@10V | |
| 34.5@28V | |
| 1.3@28V | |
| 21@28V | |
| 1 | |
| 31700 | |
| 18(Min) | |
| 16.5 | |
| 1000 | |
| 53 | |
| -65 | |
| 165 | |
| Tube | |
| Industrial | |
| Mounting | Surface Mount |
| Package Height | 3.5 |
| Package Width | 9.4 |
| Package Length | 9.5 |
| PCB changed | 3 |
| Standard Package Name | SO |
| Supplier Package | PowerSO-10RF (Formed lead) |
| 3 | |
| Lead Shape | Gull-wing |
Use this specially engineered PD57018-E RF amplifier from STMicroelectronics as a switching device in your electronic circuit design. Its maximum power dissipation is 31700 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C.
| EDA / CAD Models |
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