| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 8 | |
| ±8 | |
| 3.7 | |
| 52@4.5V | |
| 12@4.5V | |
| 1173@4V | |
| 960 | |
| 31 | |
| 15.75 | |
| 38 | |
| 7.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.94 mm |
| Package Width | 1.3 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the NTR2101PT1G power MOSFET, developed by ON Semiconductor. Its maximum power dissipation is 960 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes tmos technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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