| Compliant | |
| EAR99 | |
| Obsolete | |
| NTHD4508NT1G | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±12 | |
| 3 | |
| 75@4.5V | |
| 2.6@4.5V | |
| 180@10V | |
| 1130 | |
| 3 | |
| 15 | |
| 10 | |
| 5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.05 mm |
| Package Width | 1.65 mm |
| Package Length | 3.05 mm |
| PCB changed | 8 |
| Supplier Package | Chip FET |
| 8 | |
| Lead Shape | Flat |
Create an effective common drain amplifier using this NTHD4508NT1G power MOSFET from ON Semiconductor. Its maximum power dissipation is 1130 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Design AI-powered medical devices
Explore system design tips, part recs and AI insights to help you build faster, safer diagnostic and therapy solutions—all in Arrow’s latest white paper.