| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 3.7 | |
| 100 | |
| 1 | |
| 60@10V | |
| 15.25@10V | |
| 15.25 | |
| 3.4 | |
| 2.6 | |
| 8 | |
| 750@15V | |
| 105@15V | |
| 1 | |
| 140 | |
| 2000 | |
| 22 | |
| 15|9 | |
| 28|38 | |
| 9|11 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 38@10V|68@4.5V | |
| 20 | |
| 3.7 | |
| 2 | |
| 15 | |
| 200 | |
| 3.2 | |
| 17 | |
| Mounting | Surface Mount |
| Package Height | 0.9 mm |
| Package Width | 1.5 mm |
| Package Length | 3 mm |
| PCB changed | 6 |
| Standard Package Name | SO |
| Supplier Package | TSOP |
| 6 | |
| Lead Shape | Gull-wing |
Thanks to ON Semiconductor, both your amplification and switching needs can be taken care of with one component: the NTGS4111PT1G power MOSFET. Its maximum power dissipation is 2000 mW. This P channel MOSFET transistor operates in enhancement mode. This device is made with tmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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