onsemiNSBC143TPDXV6T1GDigital BJT - Pre-Biased
Trans Digital BJT NPN/PNP 50V 0.1A 500mW 6-Pin SOT-563 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN|PNP | |
| Dual | |
| 50 | |
| 0.1 | |
| 160@5mA@10V | |
| 4.7 | |
| -55 to 150 | |
| 0.25@0.3mA@10mA | |
| 500 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| >=120 | |
| Mounting | Surface Mount |
| Package Height | 0.55 mm |
| Package Width | 1.2 mm |
| Package Length | 1.6 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SOT-563 |
| 6 | |
| Lead Shape | Flat |
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT's within? Look no further than the npn and PNP NSBC143TPDXV6T1G digital transistor from ON Semiconductor. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 160@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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