onsemiNSBC114YDP6T5GDigital BJT - Pre-Biased
Trans Digital BJT NPN 50V 0.1A 408mW 6-Pin SOT-963 T/R
| Compliant | |
| EAR99 | |
| Active | |
| EA | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Dual | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 10 | |
| 0.21 | |
| 0.25@0.3mA@10mA | |
| 408 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.37 mm |
| Package Width | 0.8 mm |
| Package Length | 1 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SOT-963 |
| 6 | |
| Lead Shape | Flat |
Look no further than ON Semiconductor's NPN NSBC114YDP6T5G digital transistor's, the ideal component to use when designing a digital signal processing unit. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 408 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual configuration.
| EDA / CAD Models |
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