| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 260 | |
| 260 | |
| 5 | |
| 1@0.5A@5A | |
| 15 | |
| 75@500mA@5V|75@1A@5V|75@3A@5V | |
| 180000 | |
| -65 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 26.59(Max) mm |
| Package Width | 5.31(Max) mm |
| Package Length | 20.29(Max) mm |
| PCB changed | 5 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-264 |
| 5 |
Design various electronic circuits with this versatile PNP NJL0302DG GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 180000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 260 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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