onsemiMUN5330DW1T1GDigital BJT - Pre-Biased
Trans Digital BJT NPN/PNP 50V 0.1A 385mW 6-Pin SC-88 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN|PNP | |
| Dual | |
| 50 | |
| 0.1 | |
| 3@5mA@10V | |
| 1 | |
| -55 to 150 | |
| 1 | |
| 0.25@0.3mA@10mA | |
| 385 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.9 mm |
| Package Width | 1.25 mm |
| Package Length | 2 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SC-88 |
| 6 |
Are you in need of the digital form of a traditional bipolar junction transistor? The npn and PNP MUN5330DW1T1G digital transistor from ON Semiconductor is what you've been looking for. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 3@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual configuration.
| EDA / CAD Models |
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