onsemiMUN5235T1GDigital BJT - Pre-Biased
Trans Digital BJT NPN 50V 0.1A 310mW 3-Pin SC-70 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 2.2 | |
| 0.047 | |
| 0.25@1mA@10mA | |
| 310 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.85 mm |
| Package Width | 1.24 mm |
| Package Length | 2 mm |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SC-70 |
| 3 | |
| Lead Shape | Gull-wing |
You can apply the benefits of traditional BJTs to digital circuits using the NPN MUN5235T1G digital transistor, developed by ON Semiconductor. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. Its maximum power dissipation is 310 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |
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