onsemiMUN5230DW1T1GDigital BJT - Pre-Biased
Trans Digital BJT NPN 50V 0.1A 385mW 6-Pin SC-88 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Dual | |
| 50 | |
| 0.1 | |
| 3@5mA@10V | |
| 1 | |
| -55 to 150 | |
| 1 | |
| 0.25@5mA@10mA | |
| 385 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| <30 | |
| Mounting | Surface Mount |
| Package Height | 0.9 mm |
| Package Width | 1.25 mm |
| Package Length | 2 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SC-88 |
| 6 |
Look no further than ON Semiconductor's NPN MUN5230DW1T1G digital transistor, which can provide a solution to your digital signal processing needs. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 3@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a dual configuration.
| EDA / CAD Models |
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