onsemiMUN5135T1GDigital BJT - Pre-Biased
Trans Digital BJT PNP 50V 0.1A 310mW 3-Pin SC-70 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 2.2 | |
| -55 to 150 | |
| 0.047 | |
| 0.25@0.3mA@10mA | |
| 310 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.85 |
| Package Width | 1.24 |
| Package Length | 2 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SC-70 |
| 3 | |
| Lead Shape | Gull-wing |
If you require the digital form of a traditional BJT for your signal processing needs, then the PNP MUN5135T1G digital transistor from ON Semiconductor is for you. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 310 mW. It has a maximum collector emitter voltage of 50 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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