| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 450 | |
| 9 | |
| 1.1@0.2A@2A|1.25@0.9A@4.5A | |
| 0.6@0.2A@2A|0.7@0.9A@4.5A | |
| 8 | |
| 14@1A@5V|6@4.5A@1V|11@2A@1V|10@10mA@5V | |
| 125000 | |
| -65 | |
| 150 | |
| Tube | |
| Mounting | Through Hole |
| Package Height | 8.9 |
| Package Width | 4.45 |
| Package Length | 10.1 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
Add switching and amplifying capabilities to your electronic circuit with this NPN MJE18008G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 9 V. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 450 V and a maximum emitter base voltage of 9 V.
| EDA / CAD Models |
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