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onsemiMJD117GDarlington BJT

Trans Darlington PNP 100V 2A 1750mW 3-Pin(2+Tab) DPAK Tube

Traditional transistors can produce low current gains. One of ON Semiconductor's PNP MJD117G Darlington transistors can provide you with the much higher values you need. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@40mA@4A V. This product's maximum continuous DC collector current is 2 A, while its minimum DC current gain is 500@0.5A@3 V|1000@2A@3V|200@4A@3V. It has a maximum collector emitter saturation voltage of 2@8mA@2A|3@40mA@4A V. Its maximum power dissipation is 1750 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.

Total In Stock: 5,587 parts

Regional Inventory: 4,405

    Total$40.51Price for 75

    4,405 In stock: Ships tomorrow

    • (75)

      Ships tomorrow

      Ships from:
      United States of America
      Date Code:
      2431+
      Manufacturer Lead Time:
      16 weeks
      Country Of origin:
      Malaysia
      • In Stock: 4,405 parts
      • Price: $0.5401
    • Ships in 2 days

      Ships from:
      Netherlands
      Date Code:
      2534+
      Manufacturer Lead Time:
      12 weeks
      Country Of origin:
      Vietnam
      • In Stock: 1,182 parts
      • Price: $0.9001

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