| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| MJ15016G | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 200 | |
| 120 | |
| 7 | |
| -65 to 200 | |
| 7 | |
| 1.1@400mA@4A|3@3.3A@10A|5@7A@15A | |
| 15 | |
| 10@4A@2V|20@4A@4V|5@10A@4V | |
| 115000 | |
| 18 | |
| -65 | |
| 200 | |
| Tray | |
| Mounting | Through Hole |
| Package Height | 8.51(Max) mm |
| Package Width | 26.67(Max) mm |
| Package Length | 39.37 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-3 |
| 3 | |
| Lead Shape | Through Hole |
Look no further than ON Semiconductor's PNP MJ15016G general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 115000 mW. This component comes in tray packaging, useful for fast picking and placing of your parts. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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