Product Technical Specifications
RoHS (Unione Europea)
Compliant
ECCN (Stati Uniti)
EAR99
Stato del componente
Obsolete
Codice HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Maximum Continuous Drain Current (A)
18
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
25
Maximum Drain-Source Resistance (mOhm)
220@10V
Typical Gate Charge @ Vgs (nC)
60@10V
Typical Gate Charge @ 10V (nC)
60
Maximum Power Dissipation (mW)
4000
Typical Fall Time (ns)
65(Max)
Typical Rise Time (ns)
85(Max)
Typical Turn-Off Delay Time (ns)
85(Max)
Typical Turn-On Delay Time (ns)
35(Max)
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
Military
Mounting
Through Hole
Package Height
20.19(Max) - 6.48
Package Width
6.6
Package Length
13.72
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-254
Pin Count
3