IXYSIXXH30N60B3D1IGBT Chip
Trans IGBT Chip N-CH 600V 60A 270W 3-Pin(3+Tab) TO-247AD
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| XPT | |
| N | |
| Single | |
| ±20 | |
| 600 | |
| 1.66 | |
| 60 | |
| 0.1 | |
| 270 | |
| -55 | |
| 175 | |
| Mounting | Through Hole |
| Package Height | 21.46(Max) |
| Package Width | 5.3(Max) |
| Package Length | 16.26(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247AD |
| 3 |
The IXXH30N60B3D1 IGBT transistor from Ixys Corporation will work effectively even with higher currents. Its maximum power dissipation is 270000 mW. It has a maximum collector emitter voltage of 600 V. This device utilizes xpt technology. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
Design AI-powered medical devices
Explore system design tips, part recs and AI insights to help you build faster, safer diagnostic and therapy solutions—all in Arrow’s latest white paper.