| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1200 | |
| ±20 | |
| 150 | |
| 3 | |
| 4500@10V | |
| 42@10V | |
| 42 | |
| 1100@25V | |
| 200000 | |
| 18 | |
| 15 | |
| 32 | |
| 17 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 9.15(Max) |
| Package Width | 4.83(Max) |
| Package Length | 10.66(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 |
Create an effective common drain amplifier using this IXTP3N120 power MOSFET from Ixys Corporation. Its maximum power dissipation is 150000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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