| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 2 | |
| 5100@10V | |
| 7@10V | |
| 7 | |
| 240@25V | |
| 56000 | |
| 23 | |
| 20 | |
| 60 | |
| 28 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 9.15(Max) |
| Package Width | 4.83(Max) |
| Package Length | 10.66(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220 |
| 3 |
Use Ixys Corporation's IXTP2N60P power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 55000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Design AI-powered medical devices
Explore system design tips, part recs and AI insights to help you build faster, safer diagnostic and therapy solutions—all in Arrow’s latest white paper.