| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Material | Si |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 4500 |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 6 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 2 |
| Maximum Gate-Source Leakage Current (nA) | 200 |
| Maximum IDSS (uA) | 50 |
| Maximum Drain-Source Resistance (mOhm) | 20000@10V |
| Typical Gate Charge @ Vgs (nC) | 180@10V |
| Typical Gate Charge @ 10V (nC) | 180 |
| Typical Gate to Drain Charge (nC) | 83@10V |
| Typical Gate to Source Charge (nC) | 34 |
| Typical Input Capacitance @ Vds (pF) | 6860@25V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 105@25V |
| Minimum Gate Threshold Voltage (V) | 3.5 |
| Typical Output Capacitance (pF) | 267 |
| Maximum Power Dissipation (mW) | 220000 |
| Typical Fall Time (ns) | 205 |
| Typical Rise Time (ns) | 34 |
| Typical Turn-Off Delay Time (ns) | 123 |
| Typical Turn-On Delay Time (ns) | 40 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 8 |
| Typical Gate Plateau Voltage (V) | 6 |
| Typical Reverse Recovery Time (ns) | 1750 |
| Maximum Diode Forward Voltage (V) | 3 |
| Mounting | Through Hole |
| Package Height | 26.42(Max) |
| Package Width | 5.21(Max) |
| Package Length | 20.29(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SO |
| Supplier Package | ISOPLUS I5-PAK |
| Pin Count | 3 |
| Lead Shape | Through Hole |
