| Compliant | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 200 | |
| 7.5@10V | |
| 240@10V | |
| 240 | |
| 7600@25V | |
| 800000 | |
| 90 | |
| 35 | |
| 150 | |
| 30 | |
| -55 | |
| 175 | |
| Mounting | Through Hole |
| Package Height | 26.16(Max) |
| Package Width | 5.13(Max) |
| Package Length | 19.96(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-264AA |
| 3 |
This IXTK200N10P power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 800000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with polarht technology.
| EDA / CAD Models |
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