| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 500 | |
| ±20 | |
| 20 | |
| 450@10V | |
| 103@10V | |
| 103 | |
| 5120@25V | |
| 460000 | |
| 34 | |
| 32 | |
| 80 | |
| 26 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 21.45(Max) |
| Package Width | 5.3(Max) |
| Package Length | 16.24(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247AD |
| 3 | |
| Lead Shape | Through Hole |
Make an effective common gate amplifier using this IXTH20P50P power MOSFET from Ixys Corporation. Its maximum power dissipation is 460000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Design AI-powered medical devices
Explore system design tips, part recs and AI insights to help you build faster, safer diagnostic and therapy solutions—all in Arrow’s latest white paper.